| PART |
Description |
Maker |
| 5962-03226 5962-03227 |
40W Total Output Power 28 Vin 5, /-12 Vout Triple DC-DC Radiation Hardened Converter in a M3G Package. DLA Number 5962-03226
40W Total Output Power 28 Vin 5, /-15 Vout Triple DC-DC Radiation Hardened Converter in a M3G Package. DLA Number 5962-03227
|
International Rectifier
|
| MMBZ15VAL MMBZ9V1AL MMBZ5V6AL10 MMBZ27VAL MMBZ6V2A |
24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS
TVS UNIDIRECT CA 40W 14.5V SOT23 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
|
Diodes Incorporated
Diodes, Inc.
|
| CHF2525CNT500LW CHF2525CNT500LX |
RESISTOR, 50 OHM 40W DC-9GHZ; Series:CHF2525; Resistance:50R; Tolerance, resistance: /-5%; Power rating:40W; Resistor element type:Thick Film; Case style:2525; Length / Height, external:6.35mm; Tolerance, :5%; Tolerance, -:5%; RoHS Compliant: Yes
9 GHz 40 W Termination Chip
|
BOURNS INC
Bourns Electronic Solutions
|
| STR3120 STR3113 |
120V, 40W voltage regulator
113V, 40W voltage regulator
|
Sanken
|
| 2SD1062 SD1062 |
POWER TRANSISTORS(12A,50V,40W) 功率晶体管（12A0V，功0W
POWER TRANSISTORS(12A/50V/40W)
|
Mospec Semiconductor, Corp.
MOSPEC[Mospec Semiconductor]
|
| M57788L 57788L |
400-430MHz / 12.5V / 40W / FM MOBILE RADIO
400-430MHz, 12.5V, 40W, FM MOBILE RADIO
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| D1024UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSHPULL 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH-PULL
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| BP440J |
40W Photovoltaic module
|
BP Solar
|
| STS3405 |
Super high dense cell design for low R DS
|
TY Semiconductor Co., Ltd
|
| STS2301 |
Super high dense cell design for low R DS
|
TY Semiconductor Co., Ltd
|
| STS3401 |
Super high dense cell design for low R DS
|
TY Semiconductor Co., Ltd
|
